Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon
- 18 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (7) , 403-405
- https://doi.org/10.1063/1.97601
Abstract
We report measurements of the kinetics of tungsten metallization of porous silicon layers for the formation of buried conductors under single crystal silicon. The kinetics depend markedly on the partial pressure of the source gas and on the degree of porosity, in agreement with a proposed model in which the rate-limiting step is diffusion of WF6 source gas through the narrow pore channels. Preliminary results are presented of the full isolation of silicon islands by buried metal.Keywords
This publication has 8 references indexed in Scilit:
- Nickel Plating on Porous SiliconJournal of the Electrochemical Society, 1985
- Analysis of porous siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Film deposition and buried layer formation by mass-analyzed ion beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phaseApplied Physics Letters, 1984
- Selective Low Pressure Chemical Vapor Deposition of TungstenJournal of the Electrochemical Society, 1984
- Crystalline quality of silicon layer formed by FIPOS technologyJournal of Crystal Growth, 1983
- Oxidation of Porous Silicon and Properties of Its Oxide FilmJapanese Journal of Applied Physics, 1980
- Formation and Properties of Porous Silicon and Its ApplicationJournal of the Electrochemical Society, 1975