Dependence of boron axial channelling in silicon on crystal orientation
- 1 June 1992
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 19 (1-12) , 369-373
- https://doi.org/10.1002/sia.740190169
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into SiliconJournal of the Electrochemical Society, 1991
- Critical Angles for Channeling of Boron Ions Implanted into Single‐Crystal SiliconJournal of the Electrochemical Society, 1991
- Thin buried cobalt silicide layers in Si(100) by channeled implantationsApplied Physics Letters, 1991
- Channeling implants of boron in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Channeling implantation of B and P in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Application of ion implantation in submicron CMOS processesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- The formation of compound layers in silicon by ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978