Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 34 (4) , 707-715
- https://doi.org/10.1109/3.663456
Abstract
This paper presents a simulation analysis of dis- tributed Bragg reflectors (DBR's) and their affect on the charac- teristics of vertical-cavity surface-emitting lasers (VCSEL's). The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes present in VCSEL's. This simulator is used to examine the electrical characteristics of some simple DBR designs. Due to the different transport characteristics of electrons and holes, these results will show that n-type DBR designs must be different than p-type designs in order to achieve the best operating character- istics for the overall laser. This analysis will demonstrate the improvement in the characteristics by comparing the simulation results of a standard VCSEL with the results of a VCSEL using improved DBR designs.Keywords
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