Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (5) , 890-898
- https://doi.org/10.1109/16.381985
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS SimulationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Non-local impact ionization in silicon devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An Investigation of Coupled and Decoupled Iterative Algorithms for Energy Balance CalculationsPublished by Springer Nature ,1993
- Three-Dimensional Implementation of a Unified Transport ModelPublished by Springer Nature ,1993
- The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistorsIEEE Transactions on Electron Devices, 1988
- A new discretization strategy of the semiconductor equations comprising momentum and energy balanceIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Electron and hole mobilities in silicon as a function of concentration and temperatureIEEE Transactions on Electron Devices, 1982
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Temperature dependence of avalanche breakdown voltage Temperature dependence of avalanche breakdown voltage inp—njunctions†International Journal of Electronics, 1972
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970