Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
- 1 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13) , 1410-1412
- https://doi.org/10.1063/1.105208
Abstract
The temporal evolution of the photocurrent in interdigitated GaAs metal-semiconductor- metal Schottky photodiodes is directly measured in the time domain by photoconductive and electro-optic sampling with subpicosecond resolution. Excellent agreement is found between experiment and theoretical data obtained by two-dimensional self-consistent Monte Carlo calculations.Keywords
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