Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
- 29 June 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (26) , 5770-5773
- https://doi.org/10.1103/physrevlett.80.5770
Abstract
The direct observation of electric-field-induced optical anisotropy in InGaAs-InP quantum wells is reported. The analysis of this effect shows that hitherto neglected heavy- and light-hole couplings at the minizone center due to interface and external potential inversion asymmetries play a much stronger role than the classical bulk inversion asymmetry. The giant electropleochroism previously reported by Kwok et al. is quantitatively explained.Keywords
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