Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP

The effect of different fill-pulse parameters on the characteristics of deep-level transient spectroscopy (DLTS) peaks has been studied in the example of the hole traps ${\text{H4}}_F$ and $\text{H5}$ in electron-irradiated highly doped p-type InP. It is shown that the saturation peak height, the temperature of the peak maximum and its full width at half maximum depend on the applied reverse bias, the pulse amplitude, its frequency and duration. Our results show that the origin of this dependence is the electric field present in the space charge region (SCR). The experimental results are analyzed in terms of the effect of the electric field on the refilled traps in the SCR. The appropriate experimental conditions for the correct extraction of information from the DLTS spectrum are defined.