Deep level defects in proton irradiated Zn and Cd doped InP
- 1 February 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (3) , 1384-1389
- https://doi.org/10.1063/1.356418
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interfaceJournal of Applied Physics, 1991
- Effects of impurities on radiation damage in InPJournal of Applied Physics, 1986
- A model of deep center formation and reactions in electron irradiated InPJournal of Applied Physics, 1986
- Room-temperature annealing of radiation-induced defects in InP solar cellsApplied Physics Letters, 1984
- Electron Irradiation Damage in Radiation-Resistant InP Solar CellsJapanese Journal of Applied Physics, 1984
- Electron irradiation induced deep levels in p-InPApplied Physics Letters, 1982
- On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopyJournal of Applied Physics, 1982
- Electric field effect on the thermal emission of traps in semiconductor junctionsJournal of Applied Physics, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross SectionsPhysical Review B, 1973