Evidence for two distinct defects contributing to theH4deep-level transient spectroscopy peak in electron-irradiated InP

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level $H4\mathrm{}$ produced in InP by electron irradiation. The characteristics of the $H4\mathrm{}$ peak in Zn-doped InP has been studied as a function of pulse duration ${(t}_p)$ before and after annealing. Our results show that at least two traps contribute to the $H4\mathrm{}$ peak: one is a fast trap (labeled ${H4\mathrm{}}_F)$ and the other is a slow trap (labeled ${H4\mathrm{}}_S).\mathrm{}$ This is shown through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in the P sublattice.