Analysis on Electric Field Effect in Al/SrTiO3/YBa2Cu3Oy Structure
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9B) , L1342
- https://doi.org/10.1143/jjap.31.l1342
Abstract
Planar-type Al/(100)SrTiO3/(001)YBa2Cu3O y metal-insulator-superconductor field-effect transistors (MISFETs) were investigated experimentally and theoretically. The applied gate field induces the change of the carrier concentration in YBa2Cu3O y channel (or conducting layer thickness), which in turn modulates the critical current J c through the flux-creep model and flux-flow resistivity ρt through the Bardeen-Stephen model. Theoretical results explained, to a certain extent, the observed field effect in the MISFET semiquantitatively.Keywords
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