Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9R) , 1122-1129
- https://doi.org/10.1143/jjap.24.1122
Abstract
Hydrogenated amorphous Si-Sn (a-Si1-x Sn x :H) films were prepared by radio-frequency sputtering of the planarmagnetron type, and optical absorption, infrared absorption, Raman scattering, electron spin resonance and conductivity measurements were carried out on these films. Annealing experiments revealed that the a-Si1-x Sn x :H films had a low crystallization temperature, a low evolution temperature of H atoms and a low degradation temperature for the photoconductivity, compared with a-Si:H films. The incorporation of N into these films was found to improve the thermat stability without a large increase in the optical gap, although it decreased the photoconductivity.Keywords
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