Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.Keywords
This publication has 4 references indexed in Scilit:
- Application of the ionless tripod polisher to the preparation of YBCO superconducting multilayer and bulk ceramics thin filmsUltramicroscopy, 1995
- Selected area polishing for precision TEM sample preparationMicroscopy Research and Technique, 1993
- Specific preparation procedures for failure analysis of (sub)micron areas in silicon devicesUltramicroscopy, 1993
- A reliable method of TEM cross section specimen preparation of YBCO films on various substratesPhysica C: Superconductivity and its Applications, 1993