Gap states in hydrogenated amorphous silicon: A comparison of photoemission and photoconductivity results
- 31 August 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 35 (6) , 467-471
- https://doi.org/10.1016/0038-1098(80)90250-1
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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- Hole diffusion length measurements in discharge-produced aSi:HJournal of Non-Crystalline Solids, 1980
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- The effect of gap state density on the photoconductivity and photoluminescence of a-Si:HSolid State Communications, 1979
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Electron emission from amorphous siliconJournal of Non-Crystalline Solids, 1972
- Photoemission investigation of amorphous Si and GeJournal of Non-Crystalline Solids, 1972
- Optical and photoelectric properties of amorphous siliconJournal of Non-Crystalline Solids, 1972