A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process
- 1 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 459-462
- https://doi.org/10.1016/0167-9317(95)00287-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Evaluation of a positive tone chemically amplified deep UV resist for E-beam applicationsMicroelectronic Engineering, 1994
- Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologiesIEEE Transactions on Electron Devices, 1991
- Generalized scaling theory and its application to a ¼ micrometer MOSFET designIEEE Transactions on Electron Devices, 1984