Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologies
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 487-497
- https://doi.org/10.1109/16.75157
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A knock-on model to explain enhanced perimeter leakage in ion-implanted metal-oxide-semiconductor structuresJournal of Applied Physics, 1990
- Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion ImplantationJournal of the Electrochemical Society, 1990
- Ion Implantation Induced Effects at Polysdlicon Gate Feature EdgesMRS Proceedings, 1989
- A new MOSFET with large-tilt-angle implanted drain (LATID) structureIEEE Electron Device Letters, 1988
- Device dependence of charging effects from high-current ion implantationIEEE Transactions on Electron Devices, 1988
- A new LDD transistor with inverse-T gate structureIEEE Electron Device Letters, 1987
- Gate Oxide Degradation in the Polysilicon Doping/Activation ProcessJournal of the Electrochemical Society, 1987
- A study of wafer and device charging during high current ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- A novel submicron LDD transistor with inverse-T gate structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Structure-enhanced MOSFET degradation due to hot-electron injectionIEEE Electron Device Letters, 1984