A knock-on model to explain enhanced perimeter leakage in ion-implanted metal-oxide-semiconductor structures
- 1 May 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (9) , 4190-4202
- https://doi.org/10.1063/1.344956
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
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