Device dependence of charging effects from high-current ion implantation
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2338-2342
- https://doi.org/10.1109/16.8811
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A study of wafer and device charging during high current ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Application of High-Current Ion-Implantation Systems in Semiconductor-Device TechnologyPublished by Springer Nature ,1983
- High current dosimetry techniquesRadiation Effects, 1979