Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
- 27 February 1998
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 51 (1-3) , 166-169
- https://doi.org/10.1016/s0921-5107(97)00253-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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