Abstract
Previous calculations have shown that Auger yields increase at chemical edge/free space interfaces. In this paper we consider the edge formed by a well defined thin film on a substrate of different chemical composition. Two systems have been investigated: Au and Si and Al on Si. Linescans are presented for a number of different electron beam configurations and show significant features attributable to an edge effect. These effects are explained in terms of the different layer materials and their corresponding backscatter coefficients.
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