Preanneal effect on the ring-shaped distribution of oxygen precipitates in Czochralski-grown silicon
- 1 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 621-623
- https://doi.org/10.1063/1.357059
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Ring-distribution of oxygen precipitates in Czochralski silicon revealed by low-temperature infrared absorption spectroscopyApplied Physics Letters, 1993
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device ProcessingJapanese Journal of Applied Physics, 1992
- Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si WafersJapanese Journal of Applied Physics, 1989
- Infrared Absorption Studies of Thermal Donors in SiliconMRS Proceedings, 1985
- Spectroscopic studies of 450° C thermal donors in siliconPhysica B+C, 1983
- Influence of carbon and oxygen on donor formation at 700 °C in Czochralski-grown siliconJournal of Applied Physics, 1982
- Comparison of two kinds of oxygen donors in silicon by resistivity measurementsJournal of Applied Physics, 1979