Stress in chemically vapour-deposited silicon films
- 1 March 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 113 (4) , 271-285
- https://doi.org/10.1016/0040-6090(84)90469-3
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Structural investigation of silicon films chemically vapour deposited onto amorphous SiO2 substratesThin Solid Films, 1979
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Dielectric Isolation: Comprehensive, Current and FutureJournal of the Electrochemical Society, 1977
- High-performance transistors with arsenic-implanted polysil emittersIEEE Journal of Solid-State Circuits, 1976
- Optimum load device for DMOS integrated circuitsIEEE Journal of Solid-State Circuits, 1976
- Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2SubstratesJapanese Journal of Applied Physics, 1975
- Chemically Vapor Deposited Polycrystalline-Silicon FilmsIEEE Transactions on Parts, Hybrids, and Packaging, 1974
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Technology for monolithic high-power integrated circuits using polycrystalline Si for collector and isolation wallsIEEE Transactions on Electron Devices, 1973
- Silicon gate technologySolid-State Electronics, 1970