A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures
- 6 September 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (10) , 1419-1421
- https://doi.org/10.1063/1.124712
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN filmsApplied Physics Letters, 1997
- High transconductance heterostructure field-effect transistors based on AlGaN/GaNApplied Physics Letters, 1996
- Hall measurements and contact resistance in doped GaN/AlGaN heterostructuresApplied Physics Letters, 1996
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- High quality self-nucleated AlxGa1−x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double HeterostructureJapanese Journal of Applied Physics, 1993
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987