Properties of a-Si:H prepared by the photochemical decomposition of Si2H6
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 707-710
- https://doi.org/10.1016/0022-3093(83)90269-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor depositionApplied Physics Letters, 1982
- Preparation of amorphous silicon films by chemical vapor deposition from higher silanes SinH2n+2(n≳1)Applied Physics Letters, 1981
- Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor depositionApplied Physics Letters, 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977