Deep levels in cw laser-crystallized silicon thin films
- 15 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (6) , 560-563
- https://doi.org/10.1063/1.93595
Abstract
Electronic defect levels in cw laser-crystallized silicon thin films have been measured with deep level transient spectroscopy. Polycrystalline silicon thin films were deposited on thermal oxides over single-crystal silicon and crystallized with a scanning cw Ar-ion laser. Hole-emission spectra, recorded on inverted metal-oxide-silicon capacitors with p-type conductivity, reveal a continuous distribution of deep levels in the lower-half of the silicon band gap. There is no evidence of discrete energy levels with densities ⩾1×1014 cm−3, and its proposed that defect levels at the Si-SiO2 interface are a major source of emission centers in crystallized silicon thin films, along with grain boundaries which can also contribute a continuous defect distribution.Keywords
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