Deep levels in ion-implanted Si after beam annealing

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Abstract
Deep level transient spectroscopy has been utilized to study the electronic defect levels in cw laser-annealed and scanning electron-beam-annealed Si after ion implantation. For cw laser annealing, a dominant hole trap, whose concentration increases by more than one order of magnitude with increasing laser power, has been measured in slip-free samples. In contrast, only a low concentration of hole traps appears in electron-beam-annealed Si. This laser-induced defect is not stable at room temperature; it decays with time and can be restored by low-temperature thermal annealing. For the furnace-annealed control samples, rapid quenching from sufficiently high temperature into water produces the same defect energy level and annealing characteristic as the laser-induced defect. These annealing characteristics of laser-induced defects and thermally induced, quenched-in defects are tentatively correlated with Fe and Fe-B pair reactions in Si.