2.0 W CW X-band GaInP/GaAs heterojunction bipolar transistor

1 January 1994

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters

Vol. 4 (1) , 14-16
https://doi.org/10.1109/75.267680

Abstract

We report 2.0 W CW (continuous wave) output power at 9.5 GHz with a GaInP/GaAs HBT having a total emitter area of 2/spl times/500 /spl mu/m/sup 2/. The collector-emitter bias dependence and the frequency dependence of the large-signal performance of both the 2/spl times/400 and 2/spl times/500 /spl mu/m/sup 2/ unit cells are described. The uniformity of the output power and power-added efficiency is also discussed.

Keywords

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