Characterization of mechanochemically polished (111) surface of silicon crystal by diffuse x-ray scattering
- 1 May 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5) , 2706-2710
- https://doi.org/10.1063/1.332295
Abstract
Diffuse x-ray scattering technique was applied to characterize the surface of a (111) silicon wafer polished mechanochemically. Extra diffuse scattering, which is considered to be attributable to localized strain fields, was detected. The localized lattice distortions were of similar characteristics to those found in a (111) surface lapped with white alundum (No. 2000) and etched by 30∼60 μm [S. Yasuami and J. Harada, J. Appl. Phys. 52, 3989 (1981)]. The thickness of the damaged layer induced by mechanochemical polishing was only about 15 μm, however, which is much smaller than that obtained by lapping (about 100 μm). This is the first observation of the damage left in a mechanochemically polished (111) silicon surface.This publication has 4 references indexed in Scilit:
- Characterization of polished (111) silicon crystal surface by diffuse x-ray scatteringJournal of Applied Physics, 1981
- The effect of annealing on residual stress and dislocation propagation in silicon slices with damaged layer induced by scribingJournal of Materials Science, 1981
- Characterization of Dicing Process by X‐Ray Section TopographyJournal of the Electrochemical Society, 1980
- Observation of small defects in silicon crystal by diffuse x-ray scatteringJournal of Applied Physics, 1979