Current gain of narrow-base transistors
- 31 March 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (3) , 311-316
- https://doi.org/10.1016/0038-1101(86)90209-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Bipolar transistor with minimized collector-to-base junction areaIEEE Transactions on Electron Devices, 1983
- Minority current in the base region of bipolar transistors under high-level injection conditionsIEEE Transactions on Electron Devices, 1982
- Punch-through currents in P+NP+ and N+PN+ sandwich structures—I: Introduction and basic calculationsSolid-State Electronics, 1981
- Depletion-layer calculations of a double-diffused junctionIEEE Transactions on Electron Devices, 1980
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Limitations in microelectronics — II. Bipolar technologySolid-State Electronics, 1972