Effect of substrate thermal gradient on as-grown CuInS2 properties
- 31 August 1997
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 32 (8) , 1009-1015
- https://doi.org/10.1016/s0025-5408(97)00073-1
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Optical properties of AgGaSe2polycrystalline films prepared by flash evaporationJournal of Physics D: Applied Physics, 1995
- Structural and electrical characteristics of copper indium disulfide thin filmSynthetic Metals, 1995
- Preparation and Properties of CuInS2 Thin Films Produced by the Reactive Sputtering MethodJapanese Journal of Applied Physics, 1995
- Structural, optical and electrical properties of polycrystalline iron pyrite layers deposited by reactive d.c. magnetron sputteringThin Solid Films, 1994
- Electrochemical preparation and characterization of copper indium diselenide thin filmsMaterials Research Bulletin, 1994
- CuInS2 based thin film solar cell with 10.2% efficiencyApplied Physics Letters, 1993
- Segregation and drift of arsenic in SiO2 under the influence of a temperature gradientApplied Physics Letters, 1987
- Au and Al interface reactions with SiO2Applied Physics Letters, 1980
- Strain-relaxation in thin films on substratesActa Metallurgica, 1974
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956