Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Ge_x source/drain

This publication has 9 references indexed in Scilit:

• A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-μm CMOS ULSIs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Electrical properties of metal/Si1−xGex/Si(100) heterojunctions
  Applied Surface Science, 1996
• Study of Shallow p⁺n Junction Formation Using SiGe/Si System
  Japanese Journal of Applied Physics, 1993
• Schottky barrier heights of W on Si1−xGex alloys
  Applied Physics Letters, 1993
• Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
  Journal of Electronic Materials, 1992
• A new 'shift and ratio' method for MOSFET channel-length extraction
  IEEE Electron Device Letters, 1992
• Series resistance of silicided ohmic contacts for nanoelectronics
  IEEE Transactions on Electron Devices, 1992
• SiGe alloys: growth, properties and applications
  Applied Surface Science, 1991
• Theoretical calculations of heterojunction discontinuities in the Si/Ge system
  Physical Review B, 1986