Schottky barrier heights of W on Si1−xGex alloys
- 1 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (18) , 2520-2522
- https://doi.org/10.1063/1.110468
Abstract
The Schottky barrier height of W on p‐type Si1−xGex/Si has been investigated as a function of composition (10%≤x≤33%) and Si1−xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.Keywords
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