InP/InGaAsP buried mesa ridge laser: A new ridge laser with reduced leakage currents
- 29 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (22) , 2171-2173
- https://doi.org/10.1063/1.101155
Abstract
We describe a new kind of InP/InGaAsP buried ridge laser—the buried mesa ridge laser. A simple calculation shows that this laser structure has considerably reduced leakage currents compared with the conventional buried ridge laser. The fabrication steps are described. The light-current characteristic curve measured on the InP/InGaAsP buried mesa ridge laser shows a linear behavior up to 40 mW, the highest value reported so far for the buried ridge type laser.Keywords
This publication has 5 references indexed in Scilit:
- High-temperature CW operation of planar buried-ridge structure lasers at λ = 1.5μmElectronics Letters, 1988
- High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor depositionJournal of Lightwave Technology, 1986
- Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVDElectronics Letters, 1984
- Low-threshold InGaAsP ridge waveguide lasers at 1.3 µmIEEE Journal of Quantum Electronics, 1983