A quantitative analysis of strong-beam α fringes from {110} antiphase boundaries in GaAs
- 1 June 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 63 (6) , 1299-1314
- https://doi.org/10.1080/01418619108205584
Abstract
The reliability of a quantitative comparison of contrast between experimental and simulated strong-beam transmission electron microscope images depends on an accurate determination of a number of parameters. It is shown that, by recording simultaneous bright-field and dark-field images, the main sources of uncertainty in such an analysis, namely the crystal potential and the absorption parameter, can be reduced substantially. This technique has been employed in order to determine the rigid-body translation across {110} antiphase boundaries in GaAs, by analysis of strong-beam α fringes.Keywords
This publication has 28 references indexed in Scilit:
- A new look at absorption in high-energy electron diffractionProceedings, annual meeting, Electron Microscopy Society of America, 1989
- Antiphase boundaries in GaAsApplied Physics Letters, 1985
- DEFECTS IN GaAs GROWN ON Ge SUBSTRATESMRS Proceedings, 1985
- High resolution electron microscopy of interfaces between epitaxial thin films and semiconductorsUltramicroscopy, 1984
- The use of moiré techniques to measure rigid body displacementsJournal of Microscopy, 1983
- Preservation of electron microscope image contrast after inelastic scatteringPhilosophical Magazine, 1969
- Relativistic Hartree–Fock X-ray and electron scattering factorsActa Crystallographica Section A, 1968
- Electron microscope image profiles of planar defects in crystalsPhilosophical Magazine, 1967
- Effect of thermal diffuse scattering on propagation of high energy electrons through crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1965
- Precise lattice constants of germanium, aluminum, gallium arsenide, uranium, sulphur, quartz and sapphireActa Crystallographica, 1962