Substrate temperature and target composition effects on PbTiO3 thin films produced in situ by sputtering

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Abstract
The growth kinetics of PbTiO3 thin films, deposited by radio‐frequency magnetron sputtering, have been studied as a function of the substrate temperature and the lead oxide content in the target. An equilibrium zone exists where the composition of the films corresponds to stoichiometric PbTiO3, independent of the lead oxide target composition. This zone appears at relatively low temperature when the film contains little excess of lead. This behavior can be explained by a mechanism involving the competition between the reevaporation of PbO from the film during the growth and the formation of PbTiO3 by the reaction of PbO with TiO2. Under optimal growth conditions we have obtained in situ PbTiO3 thin films at 550 °C.