Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
- 15 May 2005
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 483-485, 97-100
- https://doi.org/10.4028/www.scientific.net/msf.483-485.97
Abstract
In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.Keywords
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