The influence of cesium adsorption on surface fermi level position in gallium arsenide
- 1 November 1969
- journal article
- Published by Elsevier in Surface Science
- Vol. 18 (1) , 130-139
- https://doi.org/10.1016/0039-6028(69)90271-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- CESIUM-GaAs SCHOTTKY BARRIER HEIGHTApplied Physics Letters, 1967
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967
- Fermi level stabilization at cesiated semiconductor surfacesSolid State Communications, 1967
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Spectral Analysis of Photoemissive Yields in Si, Ge, GaAs, GaSb, InAs, and InSbPhysical Review B, 1965
- Barrier Height Studies on Metal-Semiconductor SystemsJournal of Applied Physics, 1963
- Photo-emission from semiconductor surfacesPhysics Letters, 1963
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Contact Potential Difference in Silicon Crystal RectifiersPhysical Review B, 1947