Schottky barriers and extremely shallow p-n junctions formed by antimony recoil implantation into silicon
- 1 May 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (5) , 288-292
- https://doi.org/10.1088/0268-1242/2/5/007
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effect of antimony ion implantation on Al-silicon Schottky diode characteristicsJournal of Applied Physics, 1984
- Metastable solid solutions of antimony in (100) siliconNuclear Instruments and Methods in Physics Research, 1983
- New techniques of implantation for near-term applicationsNuclear Instruments and Methods in Physics Research, 1981
- Recoil implantation of antimony into siliconNuclear Instruments and Methods, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980