A structural study of polycrystalline AlN films prepared by ion-beam-assisted deposition

This publication has 20 references indexed in Scilit:

• Chemical and electronic properties of aluminium nitride on GaAs(110)
  Applied Surface Science, 1992
• Crystalline orientation control for aluminum nitride films prepared by ion-beam-assisted technology
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Infrared and tunneling spectroscopy study of aluminum nitride films prepared by ion-beam deposition
  The Journal of Physical Chemistry, 1990
• Temperature dependence of intrinsic stress in Fe, Si, and AlN prepared by ion beam sputtering
  Journal of Vacuum Science & Technology A, 1989
• Formation of ain by nitrogen molecule ion implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Auger electron and x-ray photoelectron spectroscopy of sputter deposited aluminum nitride
  Journal of Applied Physics, 1984
• 1.0-GHz thin-film bulk acoustic wave resonators on GaAs
  Applied Physics Letters, 1983
• Characterisation of aluminium nitride layers formed directly by 700-800 keV¹⁵N₂⁺implantation into aluminium
  Journal of Physics D: Applied Physics, 1982
• Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1981
• Reactive molecular beam epitaxy of aluminium nitride
  Journal of Vacuum Science and Technology, 1979