Impurity segregation correlated with microstructure in buried oxide silicon-on-insulator structures

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Abstract
During the formation of silicon-on-insulator substrates by high-dose oxygen implantation, the fixturing in the ion implanter may be sputtered onto the substrate by the oxygen beam. Large densities of heavy metal contaminants are introduced into the top silicon film and buried oxide, and remain there during epitaxial layer growth and device fabrication. These contaminants can form deep level traps by complexing with boron or oxygen, precipitate out in the gate oxide surface, remain interstitially or substitutionally in the top silicon layer, and/or decorate dislocations. A correlation is shown between the microstructure and defects, and the distribution of undesired impurities in the oxygen-implanted silicon-on-insulator substrates.