High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (8) , 461-463
- https://doi.org/10.1109/led.2002.801328
Abstract
In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.Keywords
This publication has 9 references indexed in Scilit:
- A highly linear MESFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBEElectronics Letters, 2002
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2001
- GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mmElectronics Letters, 2001
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substratesIEEE Transactions on Electron Devices, 2001
- Intermodulation distortion in pseudomorphic HEMTs and an extension of the classical theoryIEEE Transactions on Microwave Theory and Techniques, 2000
- Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHzElectronics Letters, 1997