Spectroscopic ellipsometry and transmission electron microscopy study of annealed high-dose oxygen implanted silicon
- 1 June 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (11) , 4454-4456
- https://doi.org/10.1063/1.343295
Abstract
The first results are presented of a comparative study of separation by implanted oxygen structures using spectroscopic ellipsometry (SE) and transmission electron microscopy. The strength of SE to measure the layer thicknesses of multilayer structures nondestructively is illustrated. Some limitations of the technique are also indicated.This publication has 7 references indexed in Scilit:
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