Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 1311-1314
- https://doi.org/10.1016/0038-1101(94)90415-4
Abstract
No abstract availableKeywords
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