Strained InAs single quantum wells embedded in a Ga0.47In0.53As matrix

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Abstract
Strained InAs single quantum wells (SQWs) embedded in a Ga0.47In0.53As matrix are grown on InP substrates by a modified solid‐source molecular beam epitaxy. The series of samples with well between 2 and 11 monolayers (ML) is characterized by high‐resolution double crystal x‐ray diffraction and photoluminescence (PL) spectroscopy. The excellent agreement obtained between simulated and experimental x‐ray rocking curves demonstrates the coherence of the samples. A PL linewidth as narrow as 7 meV is measured at 6 K for the SQW with a thickness of 5 ML. This is the best result reported so far for InAs QWs grown on InP. In addition, luminescence is observed up to room temperature for all samples.