Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

We report red and infrared quantum well (QW) semiconductor lasers integrated on a GaAs substrate by etching and regrowth. A separate confinement heterostructure infrared laser containing an ${\mathrm{In}}_{\mathrm{0.15}}{\mathrm{Al}}_{\mathrm{0.15}}{\mathrm{Ga}}_{\mathrm{0.7}}{\mathrm{As/Al}}_{\mathrm{0.4}}{\mathrm{Ga}}_{\mathrm{0.6}}\mathrm{As QW}$ with AlInP cladding layers was grown on a GaAs substrate. The wafer was then patterned with stripes of etch masks and was etched back to the substrate. A ${\mathrm{Ga}}_{\mathrm{0.4}}{\mathrm{In}}_{\mathrm{0.6}}{\mathrm{P/(AlGa)}}_{\mathrm{0.5}}{\mathrm{In}}_{\mathrm{0.5}}\mathrm{P QW}$ separate confinement heterostructure laser was subsequently grown side by side with the infrared laser structure. Independently addressable dual-wavelength lasers of 50 μm spacing were fabricated by forming 4 μm wide buried ridge waveguides. The dual-wavelength lasers operated in threshold currents of 10 mA at a peak wavelength of 835 nm and 20 mA at a peak wavelength of 670 nm.