Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs

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Abstract
Selective area molecular beam epitaxial regrowth of In0.2Ga0.8As lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the first time to monolithically integrate these two lasers emitting near 1.0 and 0.85 μm, respectively. During regrowth, GaAs laser stripes were protected under a dielectric mask over which polycrystalline material grew, which was later chemically etched away during the fabrication process. The lasers are of the ridge waveguide type and have threshold currents in the 30–35 mA range for cleaved, uncoated facets at room temperature and a T0 value of 100 K. The overall performance characteristics of these lasers selectively regrown on dielectric coated wafers were comparable to lasers grown over a bare substrate.