Interface effects on double injection current and photocurrent in a-Si:H n-i-p and p-i-n diodes
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 190 (1-2) , 95-106
- https://doi.org/10.1016/0022-3093(95)00261-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Physics of a-Si:H p-i-n devicesJournal of Non-Crystalline Solids, 1993
- Effect of light-induced degradation on photoconductive gain in a-Si:H n-i-p devicesJournal of Non-Crystalline Solids, 1993
- Transport and recombination in a-Si:H p-i-n diodes under forward bias conditionsJournal of Non-Crystalline Solids, 1993
- Transient forward bias currents in a-Si:H p-i-n devicesJournal of Non-Crystalline Solids, 1993
- Analysis of double injection transients in amorphous silicon p-i-n diodesJournal of Applied Physics, 1992
- Interpretation of transient currents in amorphous-silicon hydride p-i-n and n-i-n devicesIEEE Transactions on Electron Devices, 1989
- A simplified analytic model for double injection applied to amorphous silicon alloysJournal of Non-Crystalline Solids, 1987
- Comparison of fast transient response between crystal and amorphous silicon pin photodiodesJournal of Non-Crystalline Solids, 1983
- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982
- Silicide formation in Pd-a-Si:H Schottky barriersApplied Physics Letters, 1981