Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (8) , R61-R71
- https://doi.org/10.1088/0268-1242/14/8/201
Abstract
No abstract availableKeywords
This publication has 76 references indexed in Scilit:
- On the flicker noise in submicron silicon MOSFETsSolid-State Electronics, 1999
- Tunneling current noise in thin gate oxidesApplied Physics Letters, 1996
- Thin gate oxide damage due to plasma processingSemiconductor Science and Technology, 1996
- 1/f Noise in the Tunneling Current of thin Gate OxidesMRS Proceedings, 1996
- Electrical noise and VLSI interconnect reliabilityIEEE Transactions on Electron Devices, 1994
- Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET'sIEEE Electron Device Letters, 1986
- Effect of hot-electron stress on low frequency MOSFET noiseIEEE Electron Device Letters, 1984
- Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistorIEEE Transactions on Electron Devices, 1980
- Hot-electron emission in N-channel IGFET'sIEEE Transactions on Electron Devices, 1979
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979