1/f Noise in the Tunneling Current of thin Gate Oxides
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Mechanism for stress-induced leakage currents in thin silicon dioxide filmsJournal of Applied Physics, 1995
- Dielectric breakdown and reliability of MOS microstructures: Traditional characterization and low-frequency noise measurementsMicroelectronics Reliability, 1995
- Effects of plasma charging damage on the noise performance of thin-oxide MOSFET'sIEEE Electron Device Letters, 1994
- Reliability of thin SiO2Semiconductor Science and Technology, 1994
- Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistorsPhysical Review Letters, 1990
- Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesApplied Physics Letters, 1988
- Nitridation-enhanced conductivity behavior and current transport mechanism in thin thermally nitrided SiO2Journal of Applied Physics, 1988
- Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdownApplied Physics Letters, 1987
- Localized-State Interactions in Metal-Oxide-Semiconductor Tunnel DiodesPhysical Review Letters, 1987
- Carrier conduction in ultrathin nitrided oxide filmsJournal of Applied Physics, 1986