The Gas-Sensing Properties of MOCVD-Fe[sub 2]O[sub 3] Thin-Film Doping by Sn

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Abstract
A thin-film Fe2O3Fe2O3 -based gas sensor has been developed using metallorganic chemical vapor deposition (MOCVD). Sn-doping of the Fe2O3Fe2O3 thin film was also achieved by the MOCVD technique. The effects of temperature and Sn dopant toward the sensitivity of the sensor have been studied. The peak sensitivity of the sensor was found at a temperature of 280°C. Both the undoped and Sn-doped Fe2O3Fe2O3 thin-film elements are sensitive to alcohol, acetone, and liquefied petroleum gas with a short response time and recovery time (<10 s),(H2S,H2S, and producer gas. Doping of Sn decreased the resistance of Fe2O3Fe2O3 thin film and increased its stability by restricting the growth of grain in thin film, but did not change its sensitivity and selectivity. © 2002 The Electrochemical Society. All rights reserved.