Hydroplane polishing of semiconductor crystals
- 1 August 1981
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 52 (8) , 1256-1259
- https://doi.org/10.1063/1.1136763
Abstract
A new technique for obtaining optically flat, damage-free surfaces on semiconductor crystals has been developed. The polishing is very fast, being capable of removing over 30 μm of materials per minute in the case of GaAs and InP. Initial results indicate that the technique can also be used in the polishing of HgCdTe.Keywords
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